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Deposition of a-Si:H Films with a Remote Hydrogen Plasma

Published online by Cambridge University Press:  25 February 2011

N. M. Johnson ,
J. Walker ,
C. M. Doland ,
K. Winer  and
R. A. Street
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
J. Walker
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. M. Doland
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
K. Winer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Results are presented on the properties of a-Si:H thin films deposited with a remote hydrogen plasma. An essential feature of the reactor design is the use of an alumina (rather than quartz) tube to contain the hydrogen plasma for low oxygen contamination of the films. High doping efficiency is demonstrated for both P-and B-doped amorphous films, and the effects of high silane dilution and deposition temperature are illustrated with P-doped amorphous and microcrystalline silicon films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 39
Copyright
Copyright © Materials Research Society 1989

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References

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