Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T02:38:02.112Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of a-Si:H Films with a Remote Hydrogen Plasma

Published online by Cambridge University Press:  25 February 2011

N. M. Johnson ,
J. Walker ,
C. M. Doland ,
K. Winer  and
R. A. Street
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
J. Walker
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. M. Doland
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
K. Winer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Get access

Abstract

Results are presented on the properties of a-Si:H thin films deposited with a remote hydrogen plasma. An essential feature of the reactor design is the use of an alumina (rather than quartz) tube to contain the hydrogen plasma for low oxygen contamination of the films. High doping efficiency is demonstrated for both P-and B-doped amorphous films, and the effects of high silane dilution and deposition temperature are illustrated with P-doped amorphous and microcrystalline silicon films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 39
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Brodsky, M. H. and Hailer, I., IBM Tech. Disclosure Bull. 22, 3391 (1980).Google Scholar
2. Knights, J. C. and Lujan, R. A., Bull. Am. Phys. Soc. 26, 389 (1981).Google Scholar
3. Kampas, F. J., in Semiconductors and Semimetals, Vol.21A (Academic Press, Inc., New York, 1984), ed. Pankove, J. I., pp. 153–177.Google Scholar
4. Hirose, M., in Semiconductors and Semimetals Vol.21A (Academic Press, Inc., New York, 1984), ed. Pankove, J. I., pp. 9–39.Google Scholar
5. Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S., and Shimizu, I., Mat. Res. Soc. Symp. Proc. 95, 225 (1987).CrossRefGoogle Scholar
6. Parsons, G. N., Tsu, D. V., and Lucovsky, G., Mater. Res. Soc. Symp. Proc. 118, 37 (1988).CrossRefGoogle Scholar
7. Johnson, N. M., Walker, J., Doland, C. M., Winer, K., and Street, R. A., Appl. Phys. Lett., in press.Google Scholar
8. Street, R. A., Kakalios, J., Tsai, C. C., and Hayes, T. M., Phys. Rev. B 35, 1316 (1987).CrossRefGoogle Scholar
9. Kakalios, J. and Street, R. A., Phys. Rev. B 34, 6014 (1986).CrossRefGoogle Scholar
10. Johnson, N. M., Wolff, S. H., Doland, C. M., and Walker, J., Mat. Res. Soc. Symp. Proc. 118, 85 (1988).CrossRefGoogle Scholar
11. Johnson, N. M., Ready, S. E., Boyce, J. B., Doland, C. M., Wolff, S. H., and Walker, J., Appl. Phys. Lett. 53, 1626 (1988).CrossRefGoogle Scholar