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Deposition of a-SiC:H Using Organosllanes in an Argon/;Hydrogen Plasma

Published online by Cambridge University Press:  22 February 2011

Leon Maya
Leon Maya*
Affiliation:
Chemical and Analytical Sciences Division, Oak Ridge National Laboratory, P.O.B. 2008, Oak Ridge, TN 37831-6119
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Abstract

Selected organosilanes were examined as precursors for the deposition of amorphous hydrogenated silicon carbide in an argon/hydrogen plasma. The effect of process variables on the quality of the films was established by means of FTIR, Auger spectroscopy, XPS, XRD, chemical analysis, and weight losses upon pyrolysis. For a give power level there is a limiting feeding rate of the precursor under which operation of the system is dominated by thermodynamics and leads to high quality silicon carbide films that are nearly stoichiometric and low in hydrogen. Beyond that limit, carbosilane polymer formation and excessive hydrogen incorporation takes place. The hydrogen content of the plasma affects the deposition rate and the hydrogen content of the film. In the thermodynamically dominated regime the nature of the precursor has no effect on the quality of the film, it affects only the relative utilization efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 327: Symposium N – Covalent Ceramics II: Non-Oxides , 1993 , 215
Copyright
Copyright © Materials Research Society 1994

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