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Deposition of Amorphous Hydrogenated Silicon Films by VUV Laser CVD: Influence of Substrate Temperature

Published online by Cambridge University Press:  15 February 2011

H. Karstens  and
P. Hess
H. Karstens
Affiliation:
Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D-69120 Heidelberg, Germany
P. Hess
Affiliation:
Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D-69120 Heidelberg, Germany
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Abstract

Amorphous hydrogenated silicon (a-Si:H) films were deposited from disilane at substrate temperatures between 180 and 390 °C using a F2-laser (157 nm) in a parallel configuration. Material properties such as hydrogen content, SiH and SiH2 group concentration, photo-and dark conductivity, band-gap energy and the Urbach parameter were determined as a function of the deposition temperature. The material with the best optical and electronical properties was found for a substrate temperature of 260 °C. Using argon as the buffer gas instead of helium results in films of poor quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 93
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Ito, U., Toyoshima, Y., Onuki, H., Washida, N. and Ibuki, T., J. Chem. Phys. 85, 4867 (1986).Google Scholar
2. Karstens, H., Knobloch, J., Winkler, A., Pusel, A., Barth, M. and Hess, P., Appl. Surf. Sci. 86, 521 (1995).Google Scholar
3. Muranaka, Y., Motooka, T., Lubben, D. and Greene, J. E., J. Appl. Phys. 66, 910 (1989).Google Scholar
4. Gallagher, A., Mater. Res. Soc. Symp. Proc. 70, 3 (1986).Google Scholar
5. Kuschnereit, R. and Hess, P., to be published in Appl. Phys. A.Google Scholar
6. Luft, W. and Tsuo, Y. S., in Hydrogenated Amorphous Silicon Alloy Deposition Processes, ed. by Hermann, A. M. (M. Dekker, New York, 1993), p. 21.Google Scholar