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Deposition and Characterization of Carbon Films Produced by Nitrogen/Argon Mixture RF Sputtering

Published online by Cambridge University Press:  26 February 2011

C. J. Tomg ,
T. Yeh ,
J. M. Sivertsen  and
J. H. Judy
C. J. Tomg
Affiliation:
Department of Chemical Engineering and Material Science
T. Yeh
Affiliation:
Department of Chemical Engineering and Material Science
J. M. Sivertsen
Affiliation:
Department of Chemical Engineering and Material Science
J. H. Judy
Affiliation:
Department of Electrical Engineering University of Minnesota, Minneapolis, MN 55455
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Abstract

Thin carbon films were prepared by RF diode sputtering of a graphite target in a mixed nitrogen/argon plasma. A series of carbon films were deposited as a function of nitrogen partial pressure. We have observed a systematic variation of the properties of the carbon films with an increase of the nitrogen partial pressure. AES, XPS and energy gap studies showed that nitrogen will enhance the diamond sp3 bonding. Consistent with this the optical energy gap of our C:N films shows an increase from 1.1 eV to 1.4 eV using, respectively, 25 to 100 % nitrogen plasma. The mechanical properties also are shown to be enhanced for certain applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 151
Copyright
Copyright © Materials Research Society 1990

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References

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