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Dependence of thermal stability of NiSi and Ni(Pt)Si /Si on crystal orientation

Published online by Cambridge University Press:  01 February 2011

Kazuya Okubo ,
Kazuo Kawamura ,
Shinich Akiyama ,
Yasutoshi Kotaka ,
Tsukasa Itani ,
Hirofumi Watatani ,
Kenichi Yanai ,
Masafumi Nakaishi  and
Masataka Kase
Kazuya Okubo
Affiliation:
[email protected], Fujitsu Limited, Device Development, Akiruno Technology Center, 50 Fuchigami,Akiruno, Tokyo, 197-0083, Japan
Kazuo Kawamura
Affiliation:
[email protected], Fujitsu Limited, Tokyo, 197-0833, Japan
Shinich Akiyama
Affiliation:
[email protected], Fujitsu Limited, Tokyo, 197-0833, Japan
Yasutoshi Kotaka
Affiliation:
[email protected], Fujitsu Laboratories, Tokyo, 197-0833, Japan
Tsukasa Itani
Affiliation:
[email protected], Fujitsu Laboratories, Tokyo, 197-0833, Japan
Hirofumi Watatani
Affiliation:
[email protected], Fujitsu Limited, Tokyo, 197-0833, Japan
Kenichi Yanai
Affiliation:
[email protected], Fujitsu Limited, Tokyo, 197-0833, Japan
Masafumi Nakaishi
Affiliation:
[email protected], Fujitsu Limited, Tokyo, 197-0833, Japan
Masataka Kase
Affiliation:
[email protected], Fujitsu Limited, Tokyo, 197-0833, Japan
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Abstract

We report NiSi and Ni(Pt)Si films with excellent thermal stability showing a particular crystal orientation on Si(001). The Ni-silicide film with a deposition temperature of about 200 °C consists of a conformal domain structure. We examined detail crystallographic analysis of silicide and clarified the psudo-epitaxial growth of NiSi(202)//Si(220) [or NiSi(211)//Si(220)] was the key scheme of superior thermal stability. By using this optimized Ni-silicide formation process, we have fabricated Ni-silicide that is thermally stable up to 650 °C and shows low fluctuation in sheet resistance and low leakage current in electrical measurements. This process is a promising candidate for future silicidation technology.

Keywords

thin filmx-ray diffraction (XRD)crystallographic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N08-09
Copyright
Copyright © Materials Research Society 2008

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References

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