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The Dependence of the Deformation of Mn1-δO; on the Deviation from Stoichiometry**

Published online by Cambridge University Press:  21 February 2011

J. L. Routbort*
Affiliation:
Materials Science and Technology Division Argonne National Laboratory, Argonne, IL 60439
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Abstract

The stress-strain behavior of <100> single crystals of Mn1-δQ has been measured for the first time. The experiments were performed at 1200°C varying the oxygen partial pressure PO2 from 10-12 to 10-5 atms which causes the deviation from stoichiometry δ to vary between 5×10-2 to 2 percent. The upper yield stress and the stress achieved at a zero work-hardening rate vary by a factor of 2 as a function of δ and exhibit a maximum at pO2∼10-9 atms. The present results suggest that the diffusion of oxygen interstitials control deformation for large δ while oxygen vacancies control deformation for small δ, an interpretation used to explain the deformation Co1-δQ. These results illustrate the intimate relationship between defect properties and deformation in nonstoichiometric oxides.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

Work supported by the U.S. Department of Energy.

References

REFERENCES

1. Poirier, J. P., Acta Met. 26, 629 637 (1978).Google Scholar
2. Matzke, Hj., in: Non-Stoichiometric Oxides, ed. Sorensen, O., pp. 155 232, Academic Press, New York (1981).Google Scholar
3. Bretheau, T., Castaing, J., Rabier, J., and Veyssiere, P., Adv. Phys. 28, 835 1014 (1979).Google Scholar
4. Castaing, J., Domiguez-Rodriguez, A., and Monty, C., in: Proceedings of an International Symposium on Plastic Deformation of Ceramic Materials, ed. Tressler, R. E. and Bradt, R. C., Plenum Press, in press.Google Scholar
5. Kofstad, P., in: Non-Stoichiometry, Diffusion, and Electrical Conductivity in Binary Metal Oxides, Wiley-Interscience, New York (1972).Google Scholar
6. Dominguez-Rodriguez, A., Sanchez, M., Marquez, R., Castaing, J., Monty, C., and Philibert, J., Phil. Mag. A46, 411 418 (1982).CrossRefGoogle Scholar
7. Routbort, J. L., Acta Met. 30, 663 671 (1982).Google Scholar
8. Cabrera-Cano, J., Dominguez-Rodriguez, A., Marguez, R., Castaing, J., and Philibert, J., Phil. Mag. A46, 397 407 (1982).Google Scholar
9. Matzke, Hj., J. Phys. (Paris) 34, Colloque C9, 317 325 (1973).Google Scholar
10. Routbort, J. L., Javed, N. A., and Vogelwede, J. C., J. Nucl. Mater. 80, 247 259 (1972).Google Scholar
11. Bransky, I. and Tallan, N. M., J. Electrochem. Soc. 5, 788 793 (1971).Google Scholar
12. Peterson, N. L. and Chen, W. K., J. Phys. Chem. Solids 43, 29 38 (1982).Google Scholar
13. Routbort, J. L., Acta Met. 27, 649 661 (1979).Google Scholar
14. Keller, M. and Dieckmann, R., private communication (1982).Google Scholar
15. Castaing, J., private communication (1983).Google Scholar
16. Routbort, J. L., J. Phys. (Paris) 42, Colloque C3, 59 65 (1981).CrossRefGoogle Scholar