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Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature
Published online by Cambridge University Press: 26 February 2011
Abstract
The crystalline quality of InAlAs layers, grown by Molecular Beam Epitaxy on (100) InP substrates, has been investigated by Transmission Electron Microscopy in order to study the influence of InAlAs growth temperature (Tg) on the density of structural defects present in the layers. Tg was varied from 300°C up to 530°C. The density of stacking faults and threading dislocations drops dramatically as Tg increas
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- Copyright © Materials Research Society 1992
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