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Dependence of the a-Si:H Defect Density of States on the Magnetic Field Profile of an Electron Cyclotron Resonance Microwave Plasma

Published online by Cambridge University Press:  21 February 2011

F.S. Pool ,
J.M. Essick ,
Y.H. Shing  and
R.T. Mather
F.S. Pool
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
J.M. Essick
Affiliation:
Department of Physics, Occidental College, Los Angeles, California 90041
Y.H. Shing
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
R.T. Mather
Affiliation:
Department of Physics, Occidental College, Los Angeles, California 90041
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Abstract

The magnetic field profile of an electron cyclotron resonance (ECR) microwave plasma was systematically altered to determine subsequent effects on a-Si:H film quality. Films of a-Si:H were deposited at pressures of 0.7 mTorr and 5 mTorr with a H2/SiH4 ratio of approximately three. The mobility gap density of states ND, deposition rate and light to dark conductivity were determined for the a-Si:H films. This data was correlated to the magnetic field profile of the plasma, which was characterized by Langmuir probe measurements of the ion current density. By variation of the magnetic field profile ND could be altered by more than an order of magnitude, from 1×1016 to 1×1017 at 0.7 mTorr and 1×1016 to 5×1017 at 5 mTorr. Two deposition regimes were found to occur for the conditions of this study. Highly divergent magnetic fields resulted in poor quality a-Si:H, while for magnetic field profiles defining a more highly confined plasma, the a-Si:H was of device quality and relatively independent of the magnetic field configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 173
Copyright
Copyright © Materials Research Society 1992

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References

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