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Dependence of Profiles of Arsenic Implanted into Silicon on Tilt and Rotation Angles

Published online by Cambridge University Press:  28 February 2011

S. Yang ,
C. Park ,
K. Klein ,
P. Gupta ,
A. Tasch ,
R. Simonton ,
G. Lux  and
C. McGee
S. Yang
Affiliation:
Univ. of Texas at Austin, Microelectronics Research Center, Austin, TX 78712
C. Park
Affiliation:
Univ. of Texas at Austin, Microelectronics Research Center, Austin, TX 78712
K. Klein
Affiliation:
Univ. of Texas at Austin, Microelectronics Research Center, Austin, TX 78712
P. Gupta
Affiliation:
Univ. of Texas at Austin, Microelectronics Research Center, Austin, TX 78712
A. Tasch
Affiliation:
Univ. of Texas at Austin, Microelectronics Research Center, Austin, TX 78712
R. Simonton
Affiliation:
Eaton Corp., Austin, TX 78758
G. Lux
Affiliation:
Charles Evans & Assoc., Redwood City, CA 94063
C. McGee
Affiliation:
Evans East, Plainsboro, NJ 08536
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Abstract

We have performed a comprehensive experimental study of profiles of arsenic implanted into (100) silicon for a wide range of energies, doses, tilt angles, and rotation angles. Critical angles for channeling of arsenic ions in single-crystal silicon have been calculated and are found to agree well with experimental results. The <100> axial channels and the {110} planar channels are found to be primary sources of channeling. The optimal tilt and rotation angles which minimize channeling and maximize uniformity across a wafer are deduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 197
Copyright
Copyright © Materials Research Society 1992

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References

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