Published online by Cambridge University Press: 25 February 2011
Ion beam mixing in Pt-Si bilayered samples was measured during irradiation with projectiles ranging in mass from 4 amu (He) to 131 amu (Xe) at 10 K, 300 K and 373 K. Using deposited damage energy as a basis for comparing the different irradiations, it was found that the beavier ions were more efficient than the lighter ones for inducing mixing. Moreover, it was observed that the mixing was essentially independent of temperature below 373 K. These results are interpreted on the basis that the mixing is caused by the stimulated motion of defects during the cooling phase of energetic cascades.
Work supported by the U.S. Department of Energy.