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The Density-of-States Concept Versus the Experimentally Determined Distribution of Activation Energies

Published online by Cambridge University Press:  10 February 2011

Guy J. Adriaenssens  and
Vladimir I. Arkhipov
Guy J. Adriaenssens
Affiliation:
Laboratorium voor Halfgeleiderfysica, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Heverlee-Leuven, Belgium.
Vladimir I. Arkhipov
Affiliation:
Laboratorium voor Halfgeleiderfysica, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Heverlee-Leuven, Belgium.
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Abstract

Random fluctuations of localized state energies will result in thermal release of carriers trapped in those states at shorter times than would be observed from a stationary distribution of the same energies. An experimentally observed distribution of activation energies will hence differ from the distribution of average energies of the states involved. It will also be temperature-dependent. In a-Si:H, low-frequency fluctuations with a spectrum comparable to the one of 1/f noise, can account for the measured temperature dependence of the distribution. They also explain the apparent shift in localized-state energy under steady-state illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 667
Copyright
Copyright © Materials Research Society 1996

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