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Density of States of Hydrogenic Impurities in GaAs/GaAlAs Quantum Wires

Published online by Cambridge University Press:  22 February 2011

Salviano A. LeÃo ,
O. HipÓlito  and
A. Ferreira Da Silva
Salviano A. LeÃo
Affiliation:
Departamento de Física e Ciência dos Materiais, Instituto de Física e Química de São Carlos, Universidade de São Paulo, 13560–250 São Carlos, SP, Brazil
O. HipÓlito
Affiliation:
Departamento de Física e Ciência dos Materiais, Instituto de Física e Química de São Carlos, Universidade de São Paulo, 13560–250 São Carlos, SP, Brazil
A. Ferreira Da Silva
Affiliation:
Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, Caixa Postal 515, 12225 São José dos Campos, SP, Brazil, and Instituto de Física - UFBa, 40210 Salvador, Ba, Brazil
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Abstract

We investigate the occurrence of impurity density of states of hydrogenic impurities placed on the axis of a cylinder quantum-well wire of GaAs/GaAlAs structure. The effects of disorder are taken into account in the calculation. It is shown that for a specific radius of the wire, the peak energy of the density of states as a function of the impurity concentration increases very fast enlarging the bandwidth. The impurity bands are considered for the observed binding energy and radius as well as for the impurity concentration of experimental interest.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 93
Copyright
Copyright © Materials Research Society 1994

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References

[1] Petroff, P.M., Gossard, A.C., Logan, R.A. and Wiegman, W., Appl. Phys. Lett. 41, 635 (1982).CrossRefGoogle Scholar
[2] Cibert, J., Petroff, P.M., Dolan, G.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl. Phys. Lett. 49, 1275 (1986).Google Scholar
[3] Sercel, P.C. and Vahala, K.J., Phys. Rev. B44, 5681 (1991).Google Scholar
[4] Sakaki, H., Jpn. J1. Appl. Phys. 19, L735 (1980).CrossRefGoogle Scholar
[5] Fishman, G., Phys.Rev. 834, 2394 (1986).CrossRefGoogle Scholar
[6] Silva, E.A. de Andrada e, Lima, I.C. da Cunha and Silva, A. Ferreira da, Phys. Rev. B37, 8537 (1988).Google Scholar
[7] Silva, A. Ferreira da, Phys. Rev. B41, 1684 (1990).Google Scholar
[8] Brown, J.W. and Spector, H.N., J. Appl. Phys. 59, 1179 (1986).CrossRefGoogle Scholar
[9] Branis, S.V., Li, G. and Bayay, K.K., Phys. Rev. B47, 1316 (1993).CrossRefGoogle Scholar