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Degradation Phenomenon in Semiconductive Nanoamorphous Structures from Molybdenum Oxide

Published online by Cambridge University Press:  26 February 2011

A. Markosyan
Affiliation:
[email protected], Scientific Production Enterprise “ATOM”, Tevosyan st. 3/1 Yerevan 375076, Quantum electronics, Armenia, email: [email protected]
Sergo Kamanchadgyan
Affiliation:
[email protected], Scientific Production Enterprise “ATOM”, Tevosyan st. 3/1 Yerevan 375076, Armenia
Razmik Malkhasyan
Affiliation:
[email protected], Scientific Production Enterprise “ATOM”, Tevosyan st. 3/1 Yerevan 375076, Armenia
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Abstract

The condition of degradation of electrical properties of samples prepared from powder of nanoamorphous semiconductive oxide in the course of time is discovered and studied when investigating electro-physical properties of the given materials for the first time synthesized at Scientific Production Enterprise “ATOM”. It has been shown that degradation phenomenon is also present in amorphous materials, which relies on the configuration of the pores of the sample.

The resistance of sample in the open air changes over a period of several months. However, it decreases and is comparatively fast stabilized when placed in vacuum. The absorption and de-absorption of different gases have diffusion nature and highly depend on environment temperature. Water steam in atmosphere has been determined to be the main cause of degradation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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