Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-05T16:00:29.701Z Has data issue: false hasContentIssue false
  • English
  • Français

Degradation of Single-Quantum Well InGaN Green Light Emitting Diodes Under High Electrical Stress

Published online by Cambridge University Press:  10 February 2011

Marek Osiński ,
Piotr Perlin ,
Ptr G Eliseev ,
Gungtan Liu  and
Daniel L Barton
Marek Osiński
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque NM 7131–6081, USA, [email protected]
Piotr Perlin
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque NM 7131–6081, USA, [email protected]
Ptr G Eliseev
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque NM 7131–6081, USA, [email protected]
Gungtan Liu
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque NM 7131–6081, USA, [email protected]
Daniel L Barton
Affiliation:
Sandia National Laboratories, Albuquerque NM, 87185–1081, USA, [email protected]
Get access

Abstract

We performed a degradation study of high-brightness Nichia single-quantum well AlGaN/InGaN/GaN green light-emitting diodes (LEDs). The devices were subjected to high current electrical stress with current pulse amplitudes between 1 A and 7 A and voltages between 10 V and 70 V with a pulse length of 100 ns and a repetition rate of 1 kHz. The study showed that when the current amplitude was increased to the 6 A - 7.5 A range, a fast (about 1 s) degradation occurred, with a visible discharge between the p and n-type electrodes. Subsequent failure analysis revealed severe damage to metal contacts which lead to the formation of shorts in the surface plane of diode. For currents smaller than 6 A, a slow degradation was observed as a decrease in optical power and an increase in the reverse current leakage. After between 24 and 100 hours however, a rapid degradation occurred which was similar to the rapid degradation observed at higher currents. Failure analysis results suggest that carbonization of the plastic encapsulation material on the diode surface leads to the discharge which destroys the diode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1179
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Jpn. J. Appl. Phys. 34, L797, (1995).Google Scholar
2. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., Mukai, T., Jpn. J. Appl. Phys. 34, L1332, (1995).Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimotu, Y., Jpn. J. Appl. Phys.35, L74 (1996).Google Scholar
4. Osiński, M., Zeller, J., Chiu, P. and Phillips, B.S., Appl. Phys. Lett. 69, 898, (1996).Google Scholar
5. Barton, D. L., Zeller, J., Phillips, B. S., Chiu, P. -C., Askar, S., Lee, D. -S., Osiński, M., and Malloy, K. J., (IEEE Int. Rel. Phys. Symp. Proc., Las Vegas, NV 1995), p. 191–199.Google Scholar