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Degradation of Micron-Sized Silicide Lines on Polycrystalline Silicon

Published online by Cambridge University Press:  22 February 2011

J. Randall Phillips ,
Lung-Ru Zheng  and
James W. Mayer
J. Randall Phillips
Affiliation:
Cornell University, Dept. of Materials Science and Engineering, Ithaca, NY 14853
Lung-Ru Zheng
Affiliation:
Eastman Kodak Corp., Corporate Research Laboratories, Rochester, NY 14650
James W. Mayer
Affiliation:
Cornell University, Dept. of Materials Science and Engineering, Ithaca, NY 14853
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Abstract

The thermal stability of silicide fine lines on undoped CVD polycrystalline silicon was investigated. Heat treatments were in vacuum at temperatures up to 950 ° C. We observed that fine silicide lines on undoped polysilicon degrade during vacuum annealing. Voids and hillocks are formed as silicon diffuses out from the fine grained poly-Si, undergoes long-range transport through the silicide, and recrystallizes into large grains. The phenomenon is similar to that seen previously in planar samples, but fine lines were found to degrade at lower temperatures and especially along line edges. Lines of two refractory metal silicides, TiSi2 and CrSi2, and one near-noble silicide, CoSi2 were examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 155
Copyright
Copyright © Materials Research Society 1988

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References

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