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Degradation Mechanism in GaAs Led

Published online by Cambridge University Press:  16 February 2011

Zhou Jicheng ,
Fu Zhiping ,
Zhan Qianbao  and
Feng Shuifu
Zhou Jicheng
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Fu Zhiping
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zhan Qianbao
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Feng Shuifu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
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Abstract

A series of experiments have been performed to verify the nature of hole trap A and B in GaAs proposed by Zou and revised by Zhou (one of the present authors). The relative concentration of these two Craps is responsible for the degradation behavior of the diodes. Accordingly, the degradation mechanism in GaAs LED can be reasonably deduced based on thermodynamic consideration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 145
Copyright
Copyright © Materials Research Society 1990

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References

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