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Degradation and Recovery of Si Diodes by 20-Mev Protons And 220-Mev Carbon Particles

Published online by Cambridge University Press:  10 February 2011

T. Hakata ,
H. Ohyama ,
E. Simoen ,
C. Claeys ,
H. Sunaga ,
K. Kobayashi  and
M. Hososhima
T. Hakata
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Sunaga
Affiliation:
Takasaki JAERI, 1233, Watanuki Takasaki Gunma, 370-12Japan
K. Kobayashi
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
M. Hososhima
Affiliation:
Japan Electronic Materials Co., 2-5-13, Amagasaki, Hyogo, 660Japan
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Abstract

Results are presented of a study on the degradation of the electrical performance of Fe contaminated n+p Si diodes, subjected to a 220-MeV carbon irradiation. The reverse current of the diodes increases after irradiation, while the capacitance and hence the doping concentration decreases. The areal and peripheral components of the leakage current are extracted from diodes with different area to perimeter ratios. Both the generation and the recombination lifetime calculated from I/V and C/V characteristics also decrease. The deep levels in the Si substrate induced by the irradiation are mainly responsible for the degradation of the diode performance. The radiation damage is also studied for 1 -MeV electrons and 1 -MeV fast neutrons. The performance degradation for carbon irradiation is three orders of magnitude larger than that for electron irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL), which is attributed to the difference of mass and the possibility of nuclear collision with target Si atoms

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 435
Copyright
Copyright © Materials Research Society 1998

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