Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T18:49:06.889Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects Related to Mixing Behavior of Highly Silicon-Doped GaAs/AlAs Superlatitices

Published online by Cambridge University Press:  26 February 2011

N. D. Theodore ,
C. B. Carter ,
P. Mei ,
S. A. Schwarz ,
J. P. Harbison  and
T. Venkatesan
N. D. Theodore
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
P. Mei
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08855
S. A. Schwarz
Affiliation:
Bell Communications Research Inc., Redbank, NJ 07701–7020
J. P. Harbison
Affiliation:
Bell Communications Research Inc., Redbank, NJ 07701–7020
T. Venkatesan
Affiliation:
Bell Communications Research Inc., Redbank, NJ 07701–7020
Get access

Abstract

The mixing of highly silicon-doped GaAs/AlAs superlattices as a result of annealing has been investigated by transmission electron microscopy and secondary ion mass spectrometry. As silicon doping-levels were raised in this study to 1019 cm−3 and 1020 cm−3 defects such as prismatic dislocation loops and Si-rich precipitates were observed to occur in the superlattices upon annealing. A correlation has been observed between the presence of particular defects and the inhibition of dopant-enhanced superlattice mixing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 139
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jr, N. Holonyak., Laidig, W.D., Camras, M.D., Coleman, J.J., and Dapkus, P.D., Apl. Phys. Lett. 39, 102 (1981)Google Scholar
2. Coleman, J.J., Dapkus, P.D., Kirkpatrick, C.G., Camras, M.D., and Jr, N. Holonyak., Apl. Phys. Lett. 40, 904 (1982)CrossRefGoogle Scholar
3. Meehan, K., Brown, J.M., Gavrilovic, P., Jr, N. Holonyak., Burnham, R.D., Paoli, T.L. and Streifer, W., J. Apl. Phys. 55, 2672 (1984)CrossRefGoogle Scholar
4. Kawabe, M., Matsuara, N., Shimizu, N., Hasegawa, F. and Nannichi, Y., Jpn. J. Apl. Phys, Lett. 23, L623 (1984)Google Scholar
5. Meehan, K., Gavrilovic, P., Jr, N. Holonyak., Burnham, R.D., and Thornton, R., Apl. Phys. Lett. 46, 75 (1985)Google Scholar
6. Venkatesan, T., Schwarz, S.A., Hwang, D.M., Bhat, R., Koza, M., Yoon, H.W., Mei, P., Arakawa, Y. and Yariv, A., Apl. Phys. Lett. 49, 701 (1986)CrossRefGoogle Scholar
7. Venkatesan, T., Schwarz, S.A., Hwang, D.M., Bhat, R., Yoon, H.W., and Arakawa, Y., in Proceeding of Ion Beam Modification of Materials Conference, Catania, Italy, 1986, edited by Rimini, E. (Elsevier, The Netherlands, 1987); also Nucl. instrum. Methods B 19/20, 777 (1987)Google Scholar
8. Rao, E.V.K., Thibierge, H, Brillouet, F., Alexandre, F., and Azoulay, R., Apl. Phys. Lett. 46, 869 (1985)Google Scholar
9. Deppe, D.G., Holonyak, N. Jr, Hsieh, K.C., Gavrilovic, P., Stutius, W., and Williams, J., Apl. Phys. Lett. 51, 581 (1987)Google Scholar
10. Gavrilovic, P., Deppe, D.G., Meehan, K., Jr, N. Holonyak., Coleman, J.J., and Burnham, R.D., Apl. Phys. Lett. 47, 130 (1985)Google Scholar
11. Ralston, J., Wicks, G.W., Eastman, L.F., De Cooman, B.C., and Carter, C.B., J. Apl. Phys. 59, 120 (1986)Google Scholar
12. De Cooman, B.C., Carter, C.B. and Ralston, J.R., SPIE Vol.797 Advanced Processing of Semiconductor Devices, 185 (1987); B.C. De Cooman, C.B. Carter, J. Ralston, G.W. Wicks and L.F. Eastman, Mat. Res. Soc. Symp. Proc. 56, 333 (1986)Google Scholar
13. Mei, P., Schwarz, S.A., Venkatesan, T., Stoffel, N.G., and Harbison, J.P., Mat. Res. Soc. Symp. Proc., Spring Mtg., April 1988 Google Scholar
14. Deppe, D.G., Guido, L.J., Holonyak, N. Jr, Hsieh, K.C., Burnham, R.D., Thornton, R.L., and Paoli, T.L., Apl. Phys. Let. 49, 510 (1986)CrossRefGoogle Scholar
15. Guido, L.J., Holonyak, N. Jr, Hsieh, K.C., Kaliski, R.W., Plano, W.E., Burnham, R.D., Thornton, R.L., Epler, J.E., and Paoli, T.L., J. Apl. Phys. 61, 1372 (1987)Google Scholar
16. Epler, J.E., Burnham, R.D., Thornton, R.L., Paoli, T.L., and Bashaw, M.C., Apl. Phys. Lett. 49, 1447 (1986)Google Scholar
17. Ralston, J.D., Moretti, A.L., Jain, R.K. and Chambers, F.A., Apl. Phys. Lett. 50, 1817 (1987)Google Scholar