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Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam

Published online by Cambridge University Press:  03 September 2012

A. Uedono ,
Y. Ujihira ,
L. Wei ,
Y. Tabuki ,
S. Tanigawa ,
K. Wada  and
H. Nakanishi
A. Uedono
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
Y. Ujihira
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
L. Wei
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Y. Tabuki
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
K. Wada
Affiliation:
NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan
H. Nakanishi
Affiliation:
NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan
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Abstract

Vacancy-type defects in 60-keV Be+-implanted GaAs and InP were studied by a monoenergetic positron beam. The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. Vacancy-type defects introduced by ion implantation were observed in n-type GaAs. For p-type GaAs, however, this was not the case. This can be attributed to the recombination of vacancy-type defects and pre-existed interstitial-type defects in p-type GaAs. The defects induced by ion implantation in InP were also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 325
Copyright
Copyright © Materials Research Society 1992

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References

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