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Defects in Superlattices Under Pressure

Published online by Cambridge University Press:  26 February 2011

Run-Di Hong ,
David W. Jenkins ,
S. Y. Ren  and
John D. Dow
Run-Di Hong
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
David W. Jenkins
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
S. Y. Ren
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
John D. Dow
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
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Abstract

We report theoretical calculations of deep levels in GaAs/AlxGa1−xAs superlattices under hydrostatic pressure. We predict phase diagrams for DX centers: for a given composition x there is a function p(a), which relates pressure p and GaAs quantum-well width a, and defines a phase boundary between two regions: one in which DX is a deep trap in the fundamental band gap and another in which the DX deep level lies in the conduction band.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 545
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Ren, S. Y., Dow, J. D., and Shen, J., “Deep impurity levels in semiconductor superlattices,” to be published.Google Scholar
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