Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T02:09:06.302Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects in III-V Semiconductors Studied Through EPR

Published online by Cambridge University Press:  15 February 2011

T. A. Kennedy
T. A. Kennedy*
Affiliation:
Naval Research Laboratory, Washington, DC 20375
Get access

Abstract

EPR studies of Cr impurities in GaAs and intrinsic defects in GaP are reviewed to illustrate the contributions that EPR has made to the materials science and technology of III-V semiconductors. EPR has shown how the Cr impurity acts to compensate residual shallow donors or acceptors to produce semi–insulating GaAs which is used for device substrates. EPR work has identified two intrinsic defects, the PGa antisite and the VGa vacancy, and clarified their role in electrical and stoichiometric properties of GaP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 3: Symposium – Nuclear and Electron Resonance Spectroscopies Applied to Materials Science , 1980 , 95
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. For a general review, see Kaufmann, U. and Schneider, J. in Festkörperprobleme (Advances in Solid State Physics), Vol XX, p. 87, Vieweg, Braunschweig (1980).Google Scholar
2. Cronin, G. R. and Haisty, R. W., J. Electrochem. Soc. 111, 874 (1964).Google Scholar
3. Krebs, J. J. and Stauss, G. H., Phys. Rev. B 15, 17 (1977).Google Scholar
4. Krebs, J. J. and Stauss, G. H., Phys. Rev. B 16, 971 (1977).Google Scholar
5. Krebs, J. J. and Stauss, G. H., Phys. Rev. B 20, 795 (1979).Google Scholar
6. Stauss, G. H. and Krebs, J. J., Phys. Rev. B 22, 2050 (1980).Google Scholar
7. Stauss, G. H., Krebs, J. J., Lee, S. H. and Swiggard, E. M., Phys. Rev. B 22, 3141 (1980).Google Scholar
8. Kaufmann, U. and Schneider, J., Appl. Phys. Lett. 36, 747 (1980).Google Scholar
9. Jordan, A. S., Von Neida, A. R., Caruso, R. and DiDomenico, M. Jr., Appl. Phys. Lett. 19, 394 (1971).Google Scholar
10. Van Vechten, J. A., J. Electrochem. Soc. 122, 423 (1975).Google Scholar
11. Kaufmann, U., Schneider, J. and Räuber, A., Appl. Phys. Lett. 29, 312 (1976).Google Scholar
12. Kennedy, T. A. and Wilsey, N. D., Phys. Rev. Lett. 41, 977 (1978).Google Scholar
13. Kaufmann, U. and Kennedy, T. A., J. Electron. Mater., to be published.Google Scholar
14. Wolfe, C. M. and Stillman, G. E., Appl. Phys. Lett. 27, 564 (1975).Google Scholar
15. Kennedy, T. A. and Wilsey, N. D., Inst. Phys. Conf. Ser. No. 46, 375 (1979).Google Scholar
16. Kaufmann, U., private communication.Google Scholar
17. Stauss, G. H., Krebs, J. J. and Henry, R. L., Phys. Rev. B 16, 974–977 (1977).Google Scholar
18. Koschel, W. H., Kaufmann, U. and Bishop, S. G., Solid State Commun. 21, 1069 (1977).Google Scholar
19. Wagner, R. J., Krebs, J. J., Stauss, G. H. and White, A. M., Solid State Commun. 36, 15 (1980).Google Scholar