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Defects in III-V Semiconductors Studied Through EPR

Published online by Cambridge University Press:  15 February 2011

T. A. Kennedy
T. A. Kennedy*
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

EPR studies of Cr impurities in GaAs and intrinsic defects in GaP are reviewed to illustrate the contributions that EPR has made to the materials science and technology of III-V semiconductors. EPR has shown how the Cr impurity acts to compensate residual shallow donors or acceptors to produce semi–insulating GaAs which is used for device substrates. EPR work has identified two intrinsic defects, the PGa antisite and the VGa vacancy, and clarified their role in electrical and stoichiometric properties of GaP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 3: Symposium – Nuclear and Electron Resonance Spectroscopies Applied to Materials Science , 1980 , 95
Copyright
Copyright © Materials Research Society 1981

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References

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