Hostname: page-component-7479d7b7d-767nl Total loading time: 0 Render date: 2024-07-15T23:08:52.780Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects in CZ—Silicon Investigated by the Positron Annihilation Techniques

Published online by Cambridge University Press:  28 February 2011

S. Dannefaer  and
D. Kerr
S. Dannefaer
Affiliation:
Department of Physics, University of Winnipeg Winnipeg, Manitoba, Canada
D. Kerr
Affiliation:
Department of Physics, University of Winnipeg Winnipeg, Manitoba, Canada
Get access

Abstract

Positron measurements on boron doped CZ—silicon show that clusters of oxygen interstitials trap positrons. Depending on whether a vacancy is associated to this cluster or not, the positron lifetimes exhibit changes from 240 to 100 ps. The positron data indicate the nature of the initial —or precursor — stages for thermal donor formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 477
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Positron Solid-State Physics. Edited by Brandt, W. and Dupasquier, A. (North-Holland 1983)Google Scholar
2. Positrons in Solids. Edited by Hautojarvi, P. (Springer Verlag 1979)Google Scholar
3. Dannefaer, S.. J. Phys. C 15, 599 (1982)CrossRefGoogle Scholar
4.To be publishedGoogle Scholar
5. Dannefaer, S., Dean, G. W., Kerr, D. P., and Hogg, B. G.. Phys. Rev. B14, 2709 (1976)Google Scholar
6. Corbett, J. W., Watkins, G. D., and McDonald, R. S.. Phys. Rev. 135A, 1381 (1964)Google Scholar