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Defects, Entropy, and Melting of Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Sjoerd Roorda  and
Wim C. Sinke
Sjoerd Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
Wim C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Structural relaxation of amorphous Si (a-Si) is thought to be fully controlled by annihilation of point defects quenched in during preparation. The density of defects in unrelaxed a-Si is estimated from a wide variety of published experimental data to amount to several atomic %. The enthalpic and entropic contributions of these defects to the excess Gibbs free energy difference of a-Si over c-Si is estimated. The variation in free energy due to defects may lead to afurther melting temperature depression of 40 - 200 K for unrelaxed a-Si in addition to the 200 K depression already present between c-Si and relaxed a-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 9
Copyright
Copyright © Materials Research Society 1992

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