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Defects Annealing of Si+ Implanted GaAs at RT and 100°C

Published online by Cambridge University Press:  25 February 2011

G. Bai ,
D. N. Jamieson ,
M-A. Nicolet  and
T. Vreeland Jr
G. Bai
Affiliation:
Division of Applied Science and Engineering, California Institute of Technology, Pasadena, CA 91125
D. N. Jamieson
Affiliation:
Division of Applied Science and Engineering, California Institute of Technology, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
Division of Applied Science and Engineering, California Institute of Technology, Pasadena, CA 91125
T. Vreeland Jr
Affiliation:
Division of Applied Science and Engineering, California Institute of Technology, Pasadena, CA 91125
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Abstract

Annealing behavior of point defects near room temperature is studied by measuring the strain relaxation of Si+ implanted GaAs. Polished semi-insulating GaAs wafers were implanted with 300keV Si+ at liquid nitrogen ( LN2 ) and room temperature (RT ). The strain profile was obtained by the X-ray Double Crystal Diffraction ( DCD) technique and kinematical fitting. The maximum strain of the samples stored at RT and elevated temperature 100°C in air, decreases with time, which indicates the reduction of point defects. Relaxation is exponential in time. At least two time constants of 0.24hrs and 24hrs are needed to fit the data, suggesting that two different processes are responsible for annealing defects. Time constants are obtained for different doses at RT and LN2 implantation temperature, and found to be insensitive to both these quantities. The activation energy for defect migration is estimated using simple diffusion model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 67
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Brown, W.L., Mat.Res.Soc.Symp.Proc., 27 (1984) 53 Google Scholar
[2] Matteson, S., Appl. Phys. Lett., 39 (1981) 288 Google Scholar
[3] Sigmund, P., Appl. Phys. Lett., 25 (1974) 169 Google Scholar
[4] Kinchin, G.H., and Pease, R.S., Rep. Prog. Phys., 18 (1972) 1 Google Scholar
[5] Dienes, G.J., and Damask, A.C., J. Appl. Phys., 29 (1958) 1713 Google Scholar
[6] Speriosu, V.S., Paine, B.M., and Nicolet, M-A., Appl. Phys. Lett., 40 (1982) 604 Google Scholar
[7] Gamo, K., Inada, T., Mayer, J.W., Eisen, F.H., Rhodes, C.G., Rad. Eff., 33 (1977) 85 Google Scholar
[8] Picraux, S.T., Rad. Eff., 17 (1973) 261 Google Scholar
[9] Grimaldi, M.G., Paine, B.M., Nicolet, M-A., Sadana, D.K., J. Appl. Phys., 52 (1981) 4038 Google Scholar
[10] Swanson, M.L., Parsons, J.R., Hoelke, C.W., Rad. Eff. 9 (1971) 249 Google Scholar
[11] Christel, L.A., Gibbons, J.F., and Sigmon, T.W., J. Appl. Phys. 52 (1981) 7143 Google Scholar
[12] Gibbons, J.F., Proc. IEEE, 60 (1972) 1062 Google Scholar
[13] Morehead, F.F. Jr, and Crowder, B.L., Rad. Eff. 6 (1970) 27 Google Scholar
[14] Sadana, D.K., Nucl. Instr. and Meth., B7/8 (1985) 375 Google Scholar
[15] Stevanovic, D.V., Rad. Eff. 71 (1983) 95 Google Scholar
[16] Wesch, W., Gärtner, K., Wendler, E., and Götz, G., Nucl. Instr. and Meth., B15 (1986) 431 Google Scholar
[17] Paine, B.M., Hurritz, N.N., and Speriousu, V.S., to appear in J. Appl. Phys.Google Scholar
[18] Speriosu, V.S., J. Appl. Phys., 52 (1981) 6094 Google Scholar