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Defects and Their Control in SiO2 Films Prepared by D2 –Lamp Photochemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

Hidehiko Nonaka ,
Kazuo Arai  and
Shingo Ichimura
Hidehiko Nonaka
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 Japan
Kazuo Arai
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 Japan
Shingo Ichimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 Japan
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Abstract

Amorphous silica films deposited from the mixture of gases (Si2 H6 and Si2F6) by deutrium-lamp CVD were studied by IR, vacuum UV, EPR and Auger electron (AE) spectrometries. The F-doping enhanced the film growth and removed defects in the film such as -H, -OH, and E' centers. A model on deposition and defect formation mechanisms was proposed based on the thermodynamic Stabilities of resultant HF in the reactions. The AES study showed that the film surface modified by activated oxygen had an increased hardness against electron beams.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 507
Copyright
Copyright © Materials Research Society 1989

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References

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