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Defects and Electronic Transport in Rare Earth Doped Epitaxial SrTiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

S.R. Gilbert ,
B.W. Wessels ,
P.W. Brazis ,
T.P. Hogan  and
C.R. Kannewurf
S.R. Gilbert
Affiliation:
Northwestern University, Evanston, Illinois 60208
B.W. Wessels
Affiliation:
Department of Materials Science and Engineering Department of Electrical and Computer Engineering
P.W. Brazis
Affiliation:
Department of Electrical and Computer Engineering
T.P. Hogan
Affiliation:
Department of Electrical and Computer Engineering
C.R. Kannewurf
Affiliation:
Department of Electrical and Computer Engineering
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Abstract

Semiconducting, epitaxial SrTiO3 thin films doped with Eu3+ donors were analyzed using transient photocapacitance spectroscopy to determine the nature of the charge compensating defects. Deep level defects were detected with optical thresholds at Ec - 0.6 eV, Ec - 0.8 eV, and Ec - 2.05 eV. The level at Ec - 0.8 eV was the dominant defect in all of the films examined, with concentrations ranging from 1.6×1015 to 1.2×1017 cm−3 that increased as the square of donor concentration. The level was attributed to the strontium vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 21
Copyright
Copyright © Materials Research Society 1996

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