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Defect-Free Coalescence of Silicon Layers Over SiO2

Published online by Cambridge University Press:  15 February 2011

F. Banhart ,
N. Nagel ,
F. Phillipp  and
E. Bauser
F. Banhart
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstr. 1, D-70S69 Stuttgart, Germany
N. Nagel
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
F. Phillipp
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstr. 1, D-70S69 Stuttgart, Germany
E. Bauser
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
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Abstract

Defect-free coalescence of Si layers which grow laterally over partially oxidized Si substrates is achieved in liquid phase epitaxy from indium solution. An adequate design of the oxide pattern on (111) substrates ascertains that the growth fronts of the Si layers merge gradually on the SiO2 and avoids the formation of inclusions or crystallographic defects. Electron Microscopy in diffraction contrast and convergent beam electron diffraction reveal that the epitaxial Si layers bend towards the substrate as they grow laterally over the SiO2 film. The layers straighten out again as they merge and form a perfect seam of coalescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 263
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Bergmann, R., Bauser, E., Werner, J.H., Appl. Phys. Lett. 57, 351 (1990).CrossRefGoogle Scholar
[2] Nagel, N., PhD thesis, Universität Stuttgart, 1993.Google Scholar
[3] Bergmann, R., Czech, E., Silier, I., Nagel, N., Bauser, E., Queisser, H.-J., Zingg, R.P., Höfflinger, B., Appl. Phys. A 54, 103 (1992).CrossRefGoogle Scholar
[4] Zingg, R.P., Nagel, N., Bergmann, R., Bauser, E., Höfflinger, B., Queisser, H.-J., IEEE Electron Device Lett. ED–13, 294 (1992).CrossRefGoogle Scholar
[5] Banhart, F., Nagel, N., to be published In Phil. Mag.Google Scholar
[6] Banhart, F., Bergmann, R., Phillipp, F., Bauser, E., Appl. Phys. A 53, 317 (1991).CrossRefGoogle Scholar
[7] Nagel, N., Banhart, F., Czech, E., Silier, I., Phillipp, F., Bauser, E., Appl. Phys. A 57, 249 (1993).CrossRefGoogle Scholar
[8] Banhart, F., Nagel, N., Phillipp, F., Czech, E., Silier, I., Bauser, E., Appl. Phys. A 57 (1993), in the press.CrossRefGoogle Scholar
[9] Tanaka, M., Saito, R., Ueno, K., Harada, Y., J. Electron Microsc. 29, 408 (1980).Google Scholar
[10] Jones, P.M., Rackham, G.M., Steeds, J.W., Proc. Roy. Soc. London A 354, 197 (1977).Google Scholar