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Defect-Formation Dependence on Group V-Dopant Atoms in Electron-Irradiated Silicon

Published online by Cambridge University Press:  25 February 2011

O.O. Awadelkarim ,
A. Henry ,
B. Monemar  and
J.L. Lindström
O.O. Awadelkarim
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-58l 83 Linköping, SWEDEN
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-58l 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-58l 83 Linköping, SWEDEN
J.L. Lindström
Affiliation:
National Defence Research Establishment, P.O. Box 1165, S-581 11 Linköping, SWEDEN
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Abstract

The defect states introduced in P-, As- and Sb-doped silicon upon room-temperature electron-irradiation are studied by deep-level transient spectroscopy (DLTS). Evidence is provided for the involvement of the P-atom and the vacancy in the defect complex giving rise to the prominent electron trap commonly observed at ≈ EC-0.4 eV (EC being the edge of the conduction band). This electron trap together with another at EC-0.30 eV, apparently phosphorus related, exhibit configurationally metastable behaviour. Other electron traps observed at EC-0.27 eV and Ec-0.51 eV in Sb-doped material and EC-0.34 eV in As-doped material are attributed to complexes involving Sb and As atoms, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 283
Copyright
Copyright © Materials Research Society 1990

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