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Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling

Published online by Cambridge University Press:  10 February 2011

A P Knights ,
A Nejim ,
N P Barradas ,
R Gwilliam ,
P G Coleman ,
F Malik ,
H Kherandish  and
S Romani
A P Knights
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom. [email protected]
A Nejim
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom. [email protected]
N P Barradas
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom. [email protected]
R Gwilliam
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom. [email protected]
P G Coleman
Affiliation:
School of Physics, University of East Anglia, Norwich, NR4 7TJ, United Kingdom.
F Malik
Affiliation:
School of Physics, University of East Anglia, Norwich, NR4 7TJ, United Kingdom.
H Kherandish
Affiliation:
MATS UK, Innovation House, Daten Park, Warrington, WA3 6UT, United Kingdom.
S Romani
Affiliation:
MATS UK, Innovation House, Daten Park, Warrington, WA3 6UT, United Kingdom.
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Abstract

Positron annihilation spectroscopy has been used to profile the distribution of defects following implantation of 120keV Ge+ into (100) Si in the dose range l x 1010 - lx104 cm−2 . The openvolume defect profiles can be adequately fitted assuming a simple rectangular block distribution extending to 350nm. Using anodic oxidation and etching, a procedure is described which allows details of the defect tails beyond the range of the implanted ion, usually inaccessible to positron -2 annihilation measurements, to be determined. For a time averaged dose-rate (Jr) of 0.02μA cm−2 and incident angle of 7°, open-volume defects are found to exist at concentrations exceeding 1016cm−3 at depths upto 600nm whereas the peak of the depth distribution of the implanted ions (Rp) is 76nm, measured using SIMS. When the time-average dose-rate is increased by a factor of 10, defects persist at concentrations in excess of 1017cm−3 beyond lμm and the Rp increases to 101nm. The open-volume defect profiles are compared to those deduced from Rutherford backscattering-channeling using the fitting routine DICADA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 79
Copyright
Copyright © Materials Research Society 1998

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References

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