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Defect structures in undoped and doped ZnO films studied by solid state diffusion

Published online by Cambridge University Press:  26 February 2011

Haruki Ryoken ,
Isao Sakaguchi ,
Takeshi Ohgaki ,
Naoki Ohashi ,
Yutaka Adachi  and
Hajime Haneda
Haruki Ryoken
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan Kyushu University, 6–1 Kasuga-kouen, Kasuga, Fukuoka, 816–8580, Japan
Isao Sakaguchi
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
Takeshi Ohgaki
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
Naoki Ohashi
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
Yutaka Adachi
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
Hajime Haneda
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
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Abstract

Defect structures in ZnO thin films were studied to clarify the mechanism of charge compensation and crystallinity degradation induced by alloying. Regarding the undoped ZnO films, it was indicated that the degree of non-equilibrium behavior in the films deposited by PLD was much less than in the films prepared by the other two methods, i.e., MBE and sputtering, and, moreover, the solid-state diffusion behavior in the PLD-grown undoped ZnO was close to that of bulk ZnO. The heavily Al-doped films and alloy films with high concentrations of MgO exhibited significant non-equilibrium behavior, even for those prepared by PLD. It was indicated that the high concentration of extrinsic elements, e.g., Al and Mg, introduces non-equilibrium defects into ZnO films and those defects are the cause of the crystallinity degradation and thermal instability of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.23
Copyright
Copyright © Materials Research Society 2005

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References

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