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Defect Structure of the Epitaxial Pd2 Si-Silicon Interface

Published online by Cambridge University Press:  15 February 2011

D. Cherns  and
D.A. Smith
D. Cherns
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
D.A. Smith
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

The crystallography of the epitaxial Pd2 Si-silicon interface has been analyzed with special reference to the character of interfacial dislocations. It is proposed that the Pd2 Si which forms at the interface does so by the diffusion stimulated glide of transformation dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 291
Copyright
Copyright © Materials Research Society 1981

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References

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