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Defect Structure and Dynamics in Silicon

Published online by Cambridge University Press:  25 February 2011

S. T. Pantelides ,
R. Car ,
P. J. Kelly  and
A. Oshiyama
S. T. Pantelides
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
R. Car
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
P. J. Kelly
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
A. Oshiyama
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 63: Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials , 1985 , 7
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Hamann, D. R., Schluter, M. and Chiang, C., Phys. Rev. Lett. 43, 1494 (1979).CrossRefGoogle Scholar
[2] Hohenberg, P. and Kohn, W., Phys. Rev. 136, B864 (1964); L. Sham and W. Kohn, Phys. Rev. 140, A1133 (1965); for recent reviews, see The Inhomogeneous Electron Gas, edited by N. H. March and S. Lundqvist (Plenum, New York, 1984).CrossRefGoogle Scholar
[3] See article by Cohen, M. L., this volume.Google Scholar
[4] E.g., see article by Pandey, K. C., this volume.Google Scholar
[5] Louie, S. G., Schluter, M., Chelikowsky, J. R., and Cohen, M. L., Phys. Rev. B 13, 1654 (1976).CrossRefGoogle Scholar
[6] Bar-Yam, Y. and Joannopoulos, J. D., Phys. Rev. Lett. 52, 1129 (1984).CrossRefGoogle Scholar
[7] Bernholc, J., Lipari, N. O., and Pantelides, S. T., Phys. Rev. Lett. 41, 895 (1978); G. A. Baraff anf M. Schluter, Phys. Rev. Lett. 41, 892 (1978).CrossRefGoogle Scholar
[8] Car, R., Kelly, P. J., Oshiyama, A., and Pantelides, S. T., Phys. Rev. Lett. 52, 1814 (1984); R. Car, P. J. Kelly, A. Oshiyama, and S. T. Pantelides, Phys. Rev. Lett. 54, 360 (1985).CrossRefGoogle Scholar
[9] Bourgoin, J. and Corbett, J. W., Phys. Lett. 38A, 135 (1972).CrossRefGoogle Scholar
[10] Bar-Yam, Y. and Joannopoulos, J. D., Phys. Rev. B 30, 2216 (1984).CrossRefGoogle Scholar
[11] Watkins, G. D., in Radiation Damage in Semiconductors, (Dunod, Paris, 1964), p. 67; see also G. D. Watkins, in Lattice Defects in Semiconductors - 1974, edited by F. A. Huntley, Institute of Physics Conference Series No. 23, 1975, p. 1.Google Scholar
[12] For a recent review of early theories, experimental data, and on-going debates see Frank, W., Goesele, U., Mehrer, H., and Seeger, A., in Diffusion in Solids II, edited by Nowick, A. S. and Murch, G., (Academic, New York, 1984), p. 64. See also the review article by S. M. Hu, in Atomic Diffusion in Semiconductors, edited by D. Shaw, (Plenum, New York, 1973), p. 217.Google Scholar
[13] Baraff, G. A., Kane, E. O., and Schluter, M., Phys. Rev. B 21, 5662 (1980); G. D. Watkins and J. R. Troxell, Phys. Rev. Lett. 44, 593 (1980).CrossRefGoogle Scholar