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Defect States in SiC/GaN-and SiC/AlGaN/GaN-Heterostructures Characterized by Admittance and Photocurrent Spectroscopy

Published online by Cambridge University Press:  15 February 2011

H. Witte ,
A. Krtschil ,
M. Lisker ,
J. Christen ,
F. Scholz  and
J. Off
H. Witte
Affiliation:
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg, Germany
A. Krtschil
Affiliation:
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg, Germany
M. Lisker
Affiliation:
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg, Germany
J. Christen
Affiliation:
Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg, Germany
F. Scholz
Affiliation:
4th Institute of Physics, University of Stuttgart, D-70550 Stuttgart, Germany
J. Off
Affiliation:
4th Institute of Physics, University of Stuttgart, D-70550 Stuttgart, Germany
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Abstract

Deep defect levels in n-type GaN/AlN/6H-SiC- and GaN/AlGaN/6H-SiC- heterostructures grown by Metallorganic Vapor Phase Epitaxy were analyzed by Thermal and Optical Admittance and Photocurrent Spectroscopy. The various thermal and optical transitions in the spectra originating from both the Schottky contact as well as the GaN/SiC- and AlGaN/GaNheterojunctions were separated. This was achieved by variation of the modulation frequency, the use of different contact arrangements and by comparison with reference spectra from GaN/Sapphir samples and SiC substrates. In the GaN/AlGaN/SiC structures a bias voltage dependent peak shift was found which is correlated to an interface related defect distribution. In additionally to, SIC related defects, defect-band-transitions involving defects with transition energies at 2.2eV, 1.85eV, EG-(470±40) meV and EG-(65-95) meV were found for the GaN layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.71
Copyright
Copyright © Materials Research Society 1999

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