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Defect Saturation in a-SiGe:H(F) Alloys

Published online by Cambridge University Press:  21 February 2011

N.W. Wang ,
P.A. Morin ,
V. Chu  and
S. Wagner
N.W. Wang
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
P.A. Morin
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
V. Chu
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
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Abstract

It is a question as yet unresolved whether the density of light-induced defects in a-Si:H reaches a saturated value that cannot fundamentally be exceeded, or whether the defect density is in all conditions a steady-state value that reflects carrier concentration and temperature. In our experiments on a-Si:H we have observed defect saturation at low temperature and high light intensity; on the other hand, data exhibiting no saturation have also been published. To learn more about this question we have carried out saturation experiments on a-SiGe:H(F) alloys. These alloys have lower defect freeze-in temperatures than a-Si:H and, presumably, lower annealing energies. Therefore, saturation should be more difficult to achieve in the alloys than in a-Si:H.

We have studied saturation for a-SiGe:H(F) samples to temperatures above the onset of thermal annealing and have observed that its behavior is similar to that seen in a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 589
Copyright
Copyright © Materials Research Society 1992

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References

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