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Defect Reduction in GaAs Grown on Si by Using Saw-Tooth-Patterned Substrates

Published online by Cambridge University Press:  25 February 2011

Jane G. Zhu ,
M. M. Al-Jassim ,
N. H. Karam  and
K. M. Jones
Jane G. Zhu
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
M. M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
N. H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01801
K. M. Jones
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
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Abstract

Epitaxial GaAs layers have been grown on saw-tooth-patterned (STP) Si substrates by metal-organic chemical vapor deposition and analyzed by transmission electron microscopy. The utilization of this special interface feature is effective in suppressing the formation of antiphase boundaries and reducing the threading dislocation density. The growth of GaAs has been studied with the epilayer thicknesses ranging from several hundred angstroms to several microns. Very flat growth front on (100) plane above the STP region is observed. The dislocation density decreases very rapidly in the area farther away from the interface. The dislocation configuration at this STP interface is very different from that at the extensively studied two-dimensional planar interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 327
Copyright
Copyright © Materials Research Society 1993

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References

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