Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Wada, Kazumi
and
Wada, Yoshinori
1993.
Atomic layer passivation of GaAs surfaces using InP related compounds.
Advanced Materials,
Vol. 5,
Issue. 3,
p.
212.
Tang, P J P
Phillips, C C
and
Stradling, R A
1993.
Excitonic photoluminescence in high-purity InAs MBE epilayers on GaAs substrates.
Semiconductor Science and Technology,
Vol. 8,
Issue. 12,
p.
2135.
Prior, K. A.
1995.
Review of Compensation Centres in ZnSe:N.
physica status solidi (b),
Vol. 187,
Issue. 2,
p.
379.
Tang, P
Pullin, M J
Chung, S J
Phillips, C C
Stradling, R A
Norman, A G
Li, Y B
and
Hart, L
1995.
4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs1-xSbxstrained layer superlattices.
Semiconductor Science and Technology,
Vol. 10,
Issue. 8,
p.
1177.
Lin, C H
Singer, K E
Evans-Freeman, J H
Heath, K
and
Missous, M
1997.
Infrared photoreflectance of InAs.
Semiconductor Science and Technology,
Vol. 12,
Issue. 12,
p.
1619.
Krasnov, Alex N.
Bajcar, Robert C.
and
Hofstra, Peter G.
1998.
Threshold voltage trends in ZnS:Mn-based alternating-current thin-film electroluminescent devices: role of native defects.
Journal of Crystal Growth,
Vol. 194,
Issue. 1,
p.
53.
Krasnov, Alexey N.
2001.
Band gap engineering of thin-film electroluminescent devices.
Applied Physics Letters,
Vol. 78,
Issue. 21,
p.
3223.
Hsu, L.
and
Walukiewicz, W.
2001.
Effect of polarization fields on transport properties in AlGaN/GaN heterostructures.
Journal of Applied Physics,
Vol. 89,
Issue. 3,
p.
1783.
Steenbergen, E. H.
Connelly, B. C.
Metcalfe, G. D.
Shen, H.
Wraback, M.
Lubyshev, D.
Qiu, Y.
Fastenau, J. M.
Liu, A. W. K.
Elhamri, S.
Cellek, O. O.
and
Zhang, Y.-H.
2011.
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb.
Applied Physics Letters,
Vol. 99,
Issue. 25,
Steenbergen, Elizabeth H.
Nunna, Kalyan
Ouyang, Lu
Ullrich, Bruno
Huffaker, Diana L.
Smith, David J.
and
Zhang, Yong-Hang
2012.
Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
Vol. 30,
Issue. 2,
Ouyang, Lu
Steenbergen, Elizabeth H.
Zhang, Yong-Hang
Nunna, Kalyan
Huffaker, Diana L.
and
Smith, David J.
2012.
Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
Vol. 30,
Issue. 2,
Schuler-Sandy, T.
Myers, S.
Klein, B.
Gautam, N.
Ahirwar, P.
Tian, Z.-B.
Rotter, T.
Balakrishnan, G.
Plis, E.
and
Krishna, S.
2012.
Gallium free type II InAs/InAsxSb1-x superlattice photodetectors.
Applied Physics Letters,
Vol. 101,
Issue. 7,
p.
071111.
Plis, Elena A.
2014.
InAs/GaSb Type-II Superlattice Detectors.
Advances in Electronics,
Vol. 2014,
Issue. ,
p.
1.
Prins, A. D.
Lewis, M. K.
Bushell, Z. L.
Sweeney, S. J.
Liu, S.
and
Zhang, Y.-H.
2015.
Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors.
Applied Physics Letters,
Vol. 106,
Issue. 17,
Herrera, Daniel J.
Clavel, Michael B.
Hudait, Mantu K.
and
Lester, Luke F.
2020.
Device Characterization of a Sulfur-Implanted p$^{++}$/p GaSb Photovoltaic Camel Diode.
IEEE Journal of Photovoltaics,
Vol. 10,
Issue. 6,
p.
1675.