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Defect Microchemistry at the SiO2/Si Interface

Published online by Cambridge University Press:  22 February 2011

Gary W. Rubloff
Gary W. Rubloff*
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
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Abstract

A dominant, intrinsic chemical reaction path in SiO2/Si systems is the decomposition reaction Si +SiO2 → 2 SiO. Controlled analytical studies have elucidated the microchemical and microstructural aspects of this process and revealed that nucleation of the reaction occurs at existing defect sites. At an earlier stage of reaction, the same decomposition chemistry leads to electricl activation of the defects, as seen in breakdown and hole trapping phenomena. By careful and systematic control of ambient conditions during annealing, it is shown that the evolution of electrically active defects follows the same decomposition chemistry as does the physical deterioration of an entire oxide layer. These aspects of defect chemical behavior suggest implications for both defect identification and defect control in thin SiO2 layers on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 11
Copyright
Copyright © Materials Research Society 1988

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References

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