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Defect Levels in the Gap of Arsenic Selenide Glasses

Published online by Cambridge University Press:  25 February 2011

Guy J. Adriaenssens
Guy J. Adriaenssens*
Affiliation:
Laboratorium voor Vaste-Stof en Hoge-Drukfysika, K.U. Leuven Celestijnenlaan 200 D, B-3030 Leuven, Belgium.
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Abstract

The ideas and energy diagrams of the valence alternation pair model (also: negative-U model) are introduced and matched to the classical steady-state photoconductivity analysis in terms of two discrete recombination levels in the gap. Data from bulk a-As47Se53 serve as example. Negative effective correlation energies Ueff = -0.72 eV for a-As2Se3, −0.61 eV for a-As2Se4 and -0.58 eV for a-As47Se53 are obtained. The positively charged defects are found to be Se3+ with relaxation energies W+ ≃ 0.1 to 0.2 eV, and the negatively charged defects are As2− with relaxation energies W− ≃ 0.3 to 0.6 eV.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985 , 111
Copyright
Copyright © Materials Research Society 1986

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