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Defect formation at internal interfaces and grain boundaries of cold-rolled Fe and Ni during heavy ion irradiation

Published online by Cambridge University Press:  10 February 2011

G. Aggarwal
Affiliation:
School of Physical Sciences, Jawaharlal Nehru University, New Delhi–110 067, INDIA
P. Sen
Affiliation:
School of Physical Sciences, Jawaharlal Nehru University, New Delhi–110 067, INDIA
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Abstract

Instabilities arise out of dynamic events and can lead to nonequilibrium (self-organization) processes. Ion irradiation is by nature a nonequilibrium process and hence formation of structures, metastable or otherwise is to be expected. Recently, it has been theoretically predicted that metals under ion irradiation can lead to dissipative structure formation arising out of radiation damage and their subsequent annealing. The possibility of direct observation of such structures in metals, under irradiation, is however reduced due to nonavailability of a large concentration of defects (mainly point defects) at any point of time. In this experimental presentation we show that this can be overcome through the involvement of microstructural imperfections which rearrange during irradiation. Employing microstructurally impure specimens of Fe and Ni, it is shown that heavy ions dissipate their electronic energy to modify atomic arrangements at the microstructure. The increased concentration of defects (atomic rearrangements), amenable to statistical decay is shown to produce structures in the 4-probe resistivity measurements which we assign to dissipative structure formation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Selishchev, P.A. and Sugakov, VI., Rad. Eff. Def. Sol. 133, 237 (1995)Google Scholar
[2] Carpenter, J.M., Nature 36 358 (1987)Google Scholar
[3] Nicolis, G. and Prigogine, I., “Self Organisation in Non-equilibrium Systems”. Wiley. New York (1977)Google Scholar
[4] Hayashi, N. et al. Phys. Rev. Lett. 70 45 (1993)Google Scholar
[5] Sen, P., Aggarwal, G. and Tiwari, U., Phys. Rev. Lett. 80, 97 (1998)Google Scholar
[6] Sharma, B.B. et al., MRS Proceedings on “Defects and Impurity Engineered Semiconductors and Devices” Eds. Ashok, S. et al., Vol. 378 671 (1995)Google Scholar
[7] Barrett, C. and Massalski, T.B., “Structure of Metals”, 3rd ed., Macgraw-Hill, New York. pp 402 (1968)Google Scholar
[8] Todorov, T.N. and Sutton, A.P., Phys. Rev. Lett. 70 2138 (1993)Google Scholar
[9] Maury, F., Biget, M., Vajda, P., Lucasson, A. and Lucasson, P., Phy. Rev. B14 5303 (1976)Google Scholar
[10] Liu, X.D., Zhang, H.Y., Lu, K. and Hu, Z. Q., J. Phys. Condens. Matter 6, L497 (1994)Google Scholar