Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T15:21:30.342Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers with Reduced Micropipe Density

Published online by Cambridge University Press:  21 March 2011

R. Yakimova ,
M. Syväjärvi ,
H. Jacobsson ,
A. Kakanakova-Georgieva ,
T. Tuomi ,
S. Rendakova ,
V. Dmitriev  and
E. Janzén
R. Yakimova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
M. Syväjärvi
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
H. Jacobsson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
A. Kakanakova-Georgieva
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
T. Tuomi
Affiliation:
Optoelectronics Laboratory, Helsinki University of Technology, FIN-02150 Espoo, Finland
S. Rendakova
Affiliation:
TDI, Inc., Gaithersburg, MD 20877, U.S.A.
V. Dmitriev
Affiliation:
TDI, Inc., Gaithersburg, MD 20877, U.S.A.
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
Get access

Abstract

The objective of this work is to study defect occurrence and appearance in thick sublimation epitaxial layers grown on top of LPE layers with different thickness and substrates with reduced micropipe density. Data from growth on C-terminated surfaces are also presented. The results were analyzed with the aid of optical microscopy, SEM images, HRXRD and synchrotron white beam X-ray topography. A pronounced effect of the LPE (buffer) layer surface roughness on formation of dislocations and micropipes is observed in the sublimation epitaxy layers. While with increasing the thickness of the buffer layer the efficiency of the micropipe reduction increases, the structure quality of the top sublimation epilayer degrades. LPE layers with a thickness of 0.1 μm appear to be the best compromise.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H2.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kordina, O., Irvine, K., Sumakeries, J., Kong, H.S., Paisley, M.J. and Carter, C.H. Jr, Materials Science Forum, 264–268, 107 (1998).Google Scholar
2. Syväjärvi, M., Yakimova, R., Jacobsson, H., Linnarsson, M.K., Henry, A. and Janzén, E., Materials Science Forum, 338–342, 165 (2000)Google Scholar
3. Neudeck, P.G. and Powell, J.A., IEEE Electron Device Lett., 15, 63 (1994).Google Scholar
4. Neudeck, P.G., J. Electron. Mater. 24, 283 (1995).Google Scholar
5. Frank, F.C., Acta Crystallogr., 4, 497 (1951).Google Scholar
6. Heindl, J., Strunk, H.P., Heydemann, V.D., and Pensl, G., Phys. Stat. Sol (a), 162, 251 (1997).Google Scholar
7. Yakimova, R., Tuominen, M., Bakin, A.S., Fornell, J.-O., Vehanen, A. and Janzén, E., Inst. Phys. Conf. Ser. 142, 101 (1996).Google Scholar
8. Yakimova, R., Syväjärvi, M., Rendakova, S., Dmitriev, V.A., Henry, A. and Janzén, E., Materials Science Forum, 338–342, 237 (2000).Google Scholar
9. Kamata, I., Tsuchida, H., Jikimoto, T. and Izumi, K., ECSCRM2000, Kloster Banz, Germany, Sept. 3–7, 2000, Abstracts, p.16.Google Scholar
10. Tuominen, M., Yakimova, R., Vehanen, A., Janzén, E., Material Sci.&Eng., B57, 228 (1999).Google Scholar
11. Takahashi, J., Ohtani, N., Kanaya, M., J. Crystal Growth, 167, 596 (1996).Google Scholar
12. Rendakova, S., Ivantsov, V., and Dimitriev, V., Mater. Science Forum, 264–268, 163 (1998).Google Scholar
13. Syväjärvi, M., Yakimova, R., Tuominen, M., Georgieva, A. Kakanakova, MacMillan, M. F., Henry, A., Wahab, Q., and Janzén, E., J. Cryst. Growth 197, 155 (1999)Google Scholar
14. Syväjärvi, M., Yakimova, R., Jacobsson, H., and Janzén, E., J. Appl. Phys. 88,1407 (2000)Google Scholar
15. Kakanakova-Georgieva, A., MacMillan, M. F., Nishino, S., Yakimova, R., and Janzén, E.; Mater. Sci. Forum 264–268, 147 (1998).Google Scholar
16. Yakimova, R., Syväjärvi, M., Kakanakova-Georgieva, A., and Janzén, E., Diam. Relat. Mater. (2000), in pressGoogle Scholar