Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T02:00:32.714Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al2O3 by plasma-assisted molecular beam epitaxy

Published online by Cambridge University Press:  13 March 2015

Sergei Rouvimov ,
Valentin N. Jmerik ,
Dmitrii V. Nechaev ,
Valentin V. Ratnikov ,
Alexey A. Toropov ,
Eugenii A. Shevchenko ,
Pavel N. Brunkov ,
Mikolai V. Rzheutski ,
Eugenii V. Lutsenko  and
Sergey V. Ivanov
Sergei Rouvimov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
Valentin N. Jmerik
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Dmitrii V. Nechaev
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Valentin V. Ratnikov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Alexey A. Toropov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Eugenii A. Shevchenko
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Pavel N. Brunkov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Mikolai V. Rzheutski
Affiliation:
Stepanov Institute of Physics of NAS Belarus, Independence Ave. 68, Minsk 220072, Belarus
Eugenii V. Lutsenko
Affiliation:
Stepanov Institute of Physics of NAS Belarus, Independence Ave. 68, Minsk 220072, Belarus
Sergey V. Ivanov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg, Russia,
Get access

Abstract

AlGaN-based SQW heterostructures grown by plasma-assisted molecular beam epitaxy on c-Al2O3 substrates have been studied with high resolution transmission electron microscopy (HR TEM), photoluminescence spectroscopy and x-ray diffraction. The high-temperature (780°C) synthesis of the AlN buffer layer nucleated on c-Al2O3 by a migration enhanced epitaxy and including several ultra-thin GaN interlayers grown under moderate N-rich conditions was shown to be the optimum approach for lowering the threading dislocations density down to 108-109 cm-2. HR TEM study has confirmed the fine structure of single quantum wells (SQW) formed by a sub-monolayer digital alloying technique and revealed different kinds of compositional inhomogeneities in the AlxGa1-xN barrier layers of the heterostructures, including the formation of Al-rich barriers induced by the temperature-modulated epitaxy and the spontaneous compositional disordering along the growth axis for x=0.6-0.7. The influence of these phenomena on the parameters of the mid-UV stimulated emission observed in the SQW structures has been studied as well.

Keywords

molecular beam epitaxy (MBE)nanostructurenucleation & growth
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1741: Symposium AA – Synthesis, Processing and Mechanical Properties of Functional Hexagonal Materials , 2015 , mrsf14-1741-aa04-04
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Ivanov, S. V., Nechaev, D. V., Sitnikova, A. A., Ratnikov, V. V., Yagovkina, M. A., Rzheutskii, N. V., Lutsenko, E. V., and Jmerik, V. N., Semicond.Sci.Technol. 29, 084008 (2014).CrossRefGoogle Scholar
Jmerik, V. N., Lutsenko, E. V., Ivanov, S. V., Phys. Status Solidi A 210, 439 (2013).CrossRefGoogle Scholar
Li, X. H., Detchprohm, T., Kao, T. T., Satter, Md. M., Shen, S. C., Yoder, P. D., Dupuis, R. D., Wang, S., Wei, Y. O., Xie, H., Fischer, A. M., Ponce, F. A., Wernicke, T., Reich, C., Martens, M. and Kneissl, M., Appl. Phys. Lett. 105, 141106 (2014).CrossRefGoogle Scholar
Jmerik, V. N., Mizerov, A. M., Nechaev, D. V., Aseev, P. A., Sitnikova, A. A., Troshkov, S. I., Kop’ev, P. S., and Ivanov, S. V., J. Cryst. Growth 354, 188 (2012).CrossRefGoogle Scholar
Nechaev, D. V., Aseev, P. A., Jmerik, V. N., Brunkov, P. N., Kuznetsova, Y. V., Sitnikova, A. A., Ratnikov, V. V., Ivanov, S. V., J. Cryst. Growth 378, 319 (2013).CrossRefGoogle Scholar
Terashima, W., Hirayama, H., Phys. Status Solidi A 208, 1187 (2011).CrossRefGoogle Scholar
Jmerik, V. N., Shubina, T. V., Mizerov, A. M., Belyaev, K. G., Sakharov, A. V., Zamoryanskaya, M. V., Sitnikova, A. A., Davydov, V. Yu., Kop’ev, P. S., Lutsenko, E. V., Danilchyk, A. V., Rzheutskii, N. V., Yablonskii, G. P., Ivanov, S. V., J. Cryst. Growth 311, 2080 (2009).CrossRefGoogle Scholar