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Defect Engineering for Graphene Tunable Doping

Published online by Cambridge University Press:  12 April 2011

Henry Medina ,
Yung-Chang Lin  and
Po-Wen Chiu
Henry Medina
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Yung-Chang Lin
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Po-Wen Chiu
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
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Abstract

Here we describe a doping approach that enables selective and variable doping on graphene. The doping level reflected in the successive shift of the Raman G mode can be progressively changed by varying the coverage of molecular adsorption on graphene. We make use of lattice defects which serve as anchor groups for the non-covalent functionalization on graphene to enhance molecule adsorption on defective sites at the elevated processing temperatures and also orbital overlap between graphene and adsorbates (melamine). Low density of defects, which can be monitored by seeing the intensity ratio of the D to G mode in the Raman spectra, was generated by exposing graphene to short Ar plasma pulses, followed by dopant adsorption. The controllable creation of defects makes the precise doping on graphene feasible. Systematic characterizations by Raman scattering show that holes are transferred to graphene, with the doping level depending on the surface coverage of melamine. The charge transfer is also identified by the downshift of the charge neutrality point in the transfer characteristics.

Keywords

Raman spectroscopydefectselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1283: Symposium B – Carbon-Based Electronic Devices—Processing, Performance and Reliability , 2011 , mrsf10-1283-b10-05
Copyright
Copyright © Materials Research Society 2011

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References

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