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Defect Diffusion During Annealing of Low-Energy Ion-Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

P. J. Bedrossian ,
M -J. Caturla  and
T. Diaz De La Rubia
P. J. Bedrossian
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA 94551
M -J. Caturla
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA 94551
T. Diaz De La Rubia
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA 94551
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Abstract

We present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7×7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, we observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underdy the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 53
Copyright
Copyright © Materials Research Society 1997

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