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A Defect Density of ∼ 1014 cm-3 in Hydrogenated Amorphous Silicon Deposited at High Substrate Temperatures

Published online by Cambridge University Press:  21 February 2011

Gautam Ganguly  and
Akihisa Matsuda
Gautam Ganguly
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki, 305 Japan.
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki, 305 Japan.
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Abstract

The idea of surface mobility of growth precursors determined material quality has been exploited by raising the substrate temperature above the conventional 250°C and the ensuing thermal depletion of the surface hydrogen coverage compensated by increasing the precursor flux (deposition rate) to prepare ultra low defect density hydrogenated amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 39
Copyright
Copyright © Materials Research Society 1992

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References

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