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Defect Creation by Forward Bias in Amorphous Silicon P-I-N Diodes

Published online by Cambridge University Press:  21 February 2011

R. A. Street  and
M. Hack
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
M. Hack
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Metastable defects are induced in a-Si:H p-i-n devices by a forward bias current. The defect density increases approximately as the square root of time, reaching saturation at long inducing times, and with a weak temperature dependence. Current-induced defect annihilation is observed, in which the current causes a reduction in the previously induced defect density. Calculations of the changes in the forward bias current for different bulk defect densities are able to account for the measured results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 135
Copyright
Copyright © Materials Research Society 1991

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