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Defect Control During Epitaxial Regrowth by Rapid Thermal Annealing

Published online by Cambridge University Press:  15 February 2011

H. Baumgart ,
G. K. Celler ,
D. J. Lischner ,
McD. Robinson  and
T. T. Sheng
H. Baumgart
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974, USA
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974, USA
D. J. Lischner
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974, USA
McD. Robinson
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974, USA
T. T. Sheng
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974, USA
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Abstract

Rapid Thermal Annealing (RTA) with tungsten halogen lamps provides excellent regrowth of silicon layers damaged by ion implantation. In addition to minimizing dopant redistribution, the inherent advantage of this technique is good control of temperature gradients. The latter is instrumental in reducing the density of extended defects in the annealed samples. In contrast, solid phase laser annealing, which involves steep temperature gradients, always leaves interstitial dislocation loops and point defect clusters. We present a comparative study of crystal quality following laser processing and incoherent light annealing as well as furnace annealing of As, P and B ion implanted Si wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 349
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Bell Laboratories, Allentown, Pennsylvania 18103

References

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