Hostname: page-component-6bf8c574d5-gr6zb Total loading time: 0 Render date: 2025-02-20T14:44:51.038Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Characterization of CdTe Bulk Crystals Doped with Heavy Elements and Rare Earths

Published online by Cambridge University Press:  01 February 2011

Svetlana Neretina ,
N.V. Sochinskii ,
Peter Mascher  and
E. Saucedo
Svetlana Neretina
Affiliation:
Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada
N.V. Sochinskii
Affiliation:
Instituto de Microelectronica de Madrid, CNM-CSIC, Parque Techologico de Madrid, Madrid, Spain
Peter Mascher
Affiliation:
Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada
E. Saucedo
Affiliation:
Instituto de Microelectronica de Madrid, CNM-CSIC, Parque Techologico de Madrid, Madrid, Spain Departamento de Fisica de Materialses, Univesidad Automona de Madrid, Madrid, Spain
Get access

Abstract

The doping level in Cadmium Telluride (CdTe) is of the utmost importance for many applications. In this work, we have characterized CdTe crystals doped with Tl, Bi, or Yb as well as a crystal co-doped with Ge and Yb. The crystals were characterized using low-temperature Photoluminescence (PL), Positron Lifetime Spectroscopy (PLS), resistivity and a terahertz pump-probe technique that can determine carrier lifetimes. The properties of the crystals were also studied before and after a rapid thermal anneal (RTA) as well as after a longer conventional anneal. The results obtained using the various dopants vary widely. It will be shown, however, that the above mentioned dopants can form complexes with Cd vacancies (vacancy-impurity pairs). As a result, these Cd vacancies can play a key role in determining the resistivity and carrier lifetimes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.18
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Zanio, K., Telluride, Cadmium, Semiconductors and Semimetals Vol. 13 (Academic Press, New York, 1978)Google Scholar
2 Szeles, Csaba, phys. stat. sol. (b) 241, 783 (2004).Google Scholar
3 Sochynskyi, N.V., unpublished.Google Scholar
4 Fiederle, M., Fauler, A., Konrath, J., Babentsov, V., Franc, J., and James, R.B., IEEE Trans Nucl. Sci. 51, 1864 (2004).Google Scholar
5 Krause-Rehberg, R., Leipner, H.S. “Positron Annihilation in Semiconductors” (Springer, 1999) pp.100–104.Google Scholar
6 Fernandez, P., J. Optoelectronics and Advanced Materials 5, 369 (2003).Google Scholar
7 Stadler, W., Hofmann, D.M., Alt, H.C., Muschik, T., Meyer, B.L., Weigel, E., Muller-Vogt, G., Salk, M., Rupp, E., and Benz, K.W., Phys. Rev. B 51, 10619 (1995).Google Scholar
8 Takebe, T., Saraie, J., Matsunami, H., J. Appl. Phys. 53, 457 (1992)Google Scholar
9 Fiederle, M., Babentsov, V., Franc, J., Fauler, A., Benz, K.W., James, R.B., Cross, E., J. Cryst. Growth 243, 77 (2002).Google Scholar