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Deep-Level Traps in CCD Image Sensors

Published online by Cambridge University Press:  10 February 2011

William C. Mccolgin ,
James P. Lavine ,
Charles V. Stancampiano  and
Jeffrey B. Russell
William C. Mccolgin
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008, [email protected]
James P. Lavine
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008, [email protected]
Charles V. Stancampiano
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008, [email protected]
Jeffrey B. Russell
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008, [email protected]
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Abstract

We have extended by five the number of deep-level traps known to create dark current in charge-coupled device (CCD) image sensors. These include Mn, Pt, and three much weaker traps that are as yet unidentified. Using dark current spectroscopy (DCS) we show that the generation rates at 55°C range from 6400 electrons/s for Mn to only 2 electrons/s for the weakest trap, which lies 0.27 eV off mid-gap. These weak traps determine the bandwidths and resolution of the trap peaks seen in the dark current spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 475
Copyright
Copyright © Materials Research Society 1998

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