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Deep Structures Produced in III-V Materials by Combined Focused Ion Beam Irradiation and Dry Etching

Published online by Cambridge University Press:  21 February 2011

L.R. Harriott ,
Y.L. Wang ,
B.H. Chin  and
H. Temkin
L.R. Harriott
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, New Jersey 07974
Y.L. Wang
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, New Jersey 07974
B.H. Chin
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, New Jersey 07974
H. Temkin
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, New Jersey 07974
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Abstract

We have developed a direct patterning process for InP based materials which uses ion exposure followed by dry etching to produce surface topography. The substrate is first implanted with a 20 keV Ga+ beam focused to 0.2 micron diameter. The surface pattern is then developed in the substrate by etching with or without a low energy (25 -100 eV) flood Ar+ ion beam in a C12(5×10-4 Torr) atmosphere at 180 to 2000 C. This process has been integrated in a common vacuum chamber with a gas source molecular beam epitaxy (GSMBE) system. In-situ patterning and high quality overgrowth has been demonstrated for low Ar+ ion energies during etching. In this paper, we will describe a model for the patterning mechanism and suggest how it may be exploited to achieve a complete vacuum lithography process compatible with epitaxial regrowth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 217
Copyright
Copyright © Materials Research Society 1990

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References

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