Deep RIE Process for Silicon Carbide Power Electronics and MEMS

Glenn Beheim; Carl S. Salupo

doi:10.1557/PROC-622-T8.9.1

Abstract

Reactive ion etching (RIE) of silicon carbide (SiC) to depths ranging from 10 μm to more than 100 μm is required for the fabrication of SiC power electronics and SiC MEMS. A deep RIE process using an inductively coupled plasma (ICP) etch system has been developed which provides anisotropic etch profiles and smooth etched surfaces, a high rate (3000 Å/min), and a high selectivity (80:1) to the etch mask. An etch depth of 100 μm is demonstrated.

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Deep RIE Process for Silicon Carbide Power Electronics and MEMS

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This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Article contents

Deep RIE Process for Silicon Carbide Power Electronics and MEMS

Abstract

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References

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